Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric
Abstract
We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2014
- DOI:
- 10.1063/1.4882647
- Bibcode:
- 2014ApPhL.104w4104G