Interaction of Subsurface Group V dopants in Silicon
Abstract
The miniaturisation of semiconductor devices and the development of quantum information processing makes the study of individual dopant atoms in silicon greatly important. We present a density-functional theory study of subsurface Group V dopants in the hydrogenated Si(100) surface. We examine the electronic properties of individual dopants and their dependence on dopant depth; we investigate interaction of two dopants and the effect it has on the electronic and spin properties of the system. We outline the implications for device design.
Supported by EPSRC grant EP/H026622/1.- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2014
- Bibcode:
- 2014APS..MARL44003B