Dislocations in YbF3 doped BaF2 crystals
Abstract
Three concentrations of YbF3 -doped BaF2 crystals were grown using the conventional Bridgman method. Transparent colorless crystals were obtained in graphite crucible in vacuum (∼10-1 Pa) using a shaped graphite furnace. The crystals have been cooled to room temperature using an established procedure. In order to study the etch pits morphology and the dislocations density the etching method have been used. This method consists in immersing the cleaved sample in 2N HCl at 60°C for 2 minutes. Small etch pits are developed at the emergence points of the dislocations. The etch pits have triangular or hexagonal shapes, depending on the dopant concentration. The dislocations density depends on the dopant concentration.
- Publication:
-
Tim 2013 Physics Conference
- Pub Date:
- November 2014
- DOI:
- 10.1063/1.4903022
- Bibcode:
- 2014AIPC.1634..107C