Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
Abstract
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.
- Publication:
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arXiv e-prints
- Pub Date:
- November 2013
- DOI:
- 10.48550/arXiv.1311.3780
- arXiv:
- arXiv:1311.3780
- Bibcode:
- 2013arXiv1311.3780B
- Keywords:
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- Physics - Instrumentation and Detectors;
- High Energy Physics - Experiment
- E-Print:
- 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear Science Symposium and Medical Imaging Conference. arXiv admin note: text overlap with arXiv:1311.1628