Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation Kashiwagi, Junichi ; Fujiwara, Tetsuya ; Akutsu, Minoru ; Ito, Norikazu ; Chikamatsu, Kentaro ; Nakahara, Ken Abstract Publication: IEEE Electron Device Letters Pub Date: September 2013 DOI: 10.1109/LED.2013.2272491 Bibcode: 2013IEDL...34.1109K