Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator
Abstract
This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8" silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.
- Publication:
-
European Physical Journal Web of Conferences
- Pub Date:
- January 2013
- DOI:
- 10.1051/epjconf/20134016002
- Bibcode:
- 2013EPJWC..4016002P