Fano resonance in Raman scattering of graphene
Abstract
Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.
- Publication:
-
Carbon
- Pub Date:
- September 2013
- DOI:
- 10.1016/j.carbon.2013.05.019
- arXiv:
- arXiv:1305.5589
- Bibcode:
- 2013Carbo..61..373Y
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 18 pages, 3 figures, to appear in Carbon