Diagnostics of heterostructures of resonant-tunneling diodes during epitaxial growth. II. Monitoring techniques based on reflection method

It is shown that the reflection methods, in particular, the reflection anisotropy method, can be efficiently used for in situ studying and monitoring the growth of heterostructures with layers thinner than 10 monolayers. A change in the layer composition at direct GaAs/AlAs heterointerfaces of the active region of the resonant-tunneling diode is recorded by the reflection anisotropy method with a thickness resolution of ∼1 monolayer immediately during the growth. To estimate the quality of the formed active region of the resonant-tunneling diode, comparative reflection anisotropy spectroscopy is used.