Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories
Abstract
We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2013
- DOI:
- 10.1063/1.4855155
- arXiv:
- arXiv:1402.0739
- Bibcode:
- 2013ApPhL.103z3502J
- Keywords:
-
- bismuth compounds;
- electric domains;
- ferroelectric capacitors;
- ferroelectric storage;
- ferroelectric switching;
- platinum;
- random-access storage;
- Schottky barriers;
- strontium compounds;
- 85.50.Gk;
- 84.30.Sk;
- 84.32.Tt;
- Non-volatile ferroelectric memories;
- Pulse and digital circuits;
- Capacitors;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 14 pages, 6 figures