Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
Abstract
The effective electron mass parameter in Si-doped Al0.72Ga0.28N is determined to be m∗=(0.336±0.020) m0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m∗=0.232 m0 for GaN, an average effective electron mass of m∗=0.376 m0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E1(TO) and one phonon mode behavior of the A1(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2013
- DOI:
- 10.1063/1.4833195
- arXiv:
- arXiv:1311.3684
- Bibcode:
- 2013ApPhL.103u2107S
- Keywords:
-
- aluminium compounds;
- effective mass;
- ellipsometry;
- Fourier transform spectra;
- gallium compounds;
- III-V semiconductors;
- phonons;
- semiconductor epitaxial layers;
- silicon;
- spin Hall effect;
- wide band gap semiconductors;
- 71.20.Nr;
- 73.61.Ey;
- 72.20.My;
- 71.18.+y;
- 78.66.Fd;
- 63.20.dd;
- Semiconductor compounds;
- III-V semiconductors;
- Galvanomagnetic and other magnetotransport effects;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Measurements;
- Physics - Optics;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1063/1.4833195