The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures
Abstract
The effects of AlN interlayer growth conditions on InAlN/AlN/GaN heterostructures are investigated, with interlayers imaged as they would appear prior to InAlN barrier layer deposition using surface atomic force microscopy scans undertaken immediately after growth. Surface morphologies and subsequent heterostructure conductivity suggested minimum on-resistance can be achieved by balancing the underlying GaN channel decomposition and interfacial roughening when deciding AlN interlayer growth parameters on a sapphire substrate of a given miscut.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2013
- DOI:
- 10.1063/1.4818645
- Bibcode:
- 2013ApPhL.103h1602S
- Keywords:
-
- aluminium compounds;
- atomic force microscopy;
- electrical conductivity;
- electrical resistivity;
- gallium compounds;
- III-V semiconductors;
- indium compounds;
- interface roughness;
- MOCVD;
- semiconductor epitaxial layers;
- semiconductor growth;
- semiconductor heterojunctions;
- surface morphology;
- vapour phase epitaxial growth;
- wide band gap semiconductors;
- 68.55.ag;
- 68.35.Ct;
- 73.40.Kp;
- 81.05.Ea;
- 81.15.Gh;
- 81.15.Kk;
- Semiconductors;
- Interface structure and roughness;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- III-V semiconductors;
- Chemical vapor deposition;
- Vapor phase epitaxy;
- growth from vapor phase