Low resistance GaN/InGaN/GaN tunnel junctions
Abstract
Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 × 10-4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are explained using energy band diagrams. The lower bandgap and polarization fields reduce tunneling barrier, eliminating the need for ohmic contacts to p-type GaN. This demonstration of efficient tunnel injection of carriers in III-nitrides can lead to a replacement of existing resistive p-type contact material in light emitters with tunneling contact layers requiring very little metal footprint on the surface, resulting in enhanced light extraction.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2013
- DOI:
- 10.1063/1.4796041
- arXiv:
- arXiv:1211.4905
- Bibcode:
- 2013ApPhL.102k3503K
- Keywords:
-
- energy gap;
- gallium compounds;
- III-V semiconductors;
- indium compounds;
- ohmic contacts;
- p-n junctions;
- wide band gap semiconductors;
- 73.40.Kp;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 4 figures