Interaction of terahertz radiation with surface and interface plasmon-phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures
Abstract
Surface phonon and plasmon-phonon polariton characteristics of GaAs, AlxGa1-xAs/GaAs, and GaN/Al2O3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.
- Publication:
-
Applied Physics A: Materials Science & Processing
- Pub Date:
- January 2013
- DOI:
- 10.1007/s00339-012-7473-6
- Bibcode:
- 2013ApPhA.110..153P
- Keywords:
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- GaAs;
- Sapphire Substrate;
- Phonon Frequency;
- Couple Plasmon;
- Longitudinal Optical Phonon