Focused Laser Induced Spatially Controllable p-n junction in Graphene Field-Effect Transistor
Abstract
Tunable local doping on graphene is an important issue for future graphene-based electronics. Here we investigate a local doping effect by a focused laser irradiation and demonstrate a spatially controllable p-n junction in graphene field-effect transistor. Scanning photocurrent microscopy with varying back-gate voltages reveals the local charge trap in gate oxide near the laser-irradiated region. This is manifested by itself as double peaks in resistance as a function of gate voltage in graphene device, where the region between the double peaks corresponds to the p-n junction. Irradiation of a focused laser on graphene device suggests a new pave to spatially control the doping level, position and size of doped segment on graphene channel in a nondestructive way without high electrical bias, local gate electrode and chemical process.
Korea Research Institute of Standards and Science- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2013
- Bibcode:
- 2013APS..MAR.Z5007K