Dirac Fermions in Strongly Bound Graphene Systems
Abstract
It is highly desirable to integrate graphene into existing semiconductor technology, where the combined system is thermodynamically stable yet maintain a Dirac cone at the Fermi level. First-principles calculations reveal that a certain transition metal (TM) intercalated graphene/SiC(0001), such as the strongly bound graphene on SiC with Mn intercalation, could be such a system. Different from freestanding graphene, the hybridization between graphene and Mn/SiC leads to the formation of a dispersive Dirac cone of primarily TM d characters. The corresponding Dirac spectrum is still isotropic, and the transport behavior is nearly identical to that of freestanding graphene for a bias as large as 0.6 V, except that the Fermi velocity is half that of graphene. A simple model Hamiltonian is developed to qualitatively account for the physics of the transfer of the Dirac cone from a dispersive system (e.g., graphene) to an originally nondispersive system (e.g., TM).
- Publication:
-
Physical Review Letters
- Pub Date:
- November 2012
- DOI:
- 10.1103/PhysRevLett.109.206802
- arXiv:
- arXiv:1206.0512
- Bibcode:
- 2012PhRvL.109t6802L
- Keywords:
-
- 73.22.Pr;
- 61.48.Gh;
- 68.55.Ln;
- 73.63.-b;
- Defects and impurities: doping implantation distribution concentration etc.;
- Electronic transport in nanoscale materials and structures;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- Apr 25th, 2012 submitted