Parametric model dielectric functions of InAs for temperatures from 22 to 675 K
Abstract
Dielectric functions as continuous functions of temperature are useful for nondestructive in-situ monitoring of deposition and device design. Here, we present an analytic expression that accurately represents the dielectric function ɛ = ɛ1 + iɛ2 of InAs from 0.74 to 6.54 eV for temperatures from 22 to 675 K. We use the parametric model, which is known to accurately portray ɛ without unphysical assumptions. The parameters are obtained from ɛ spectra obtained on an InAs substrate by using spectroscopic ellipsometry. The dielectric function was successfully parameterized by using seven Gaussian-broadened polynomials.
- Publication:
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Journal of Korean Physical Society
- Pub Date:
- December 2012
- DOI:
- 10.3938/jkps.61.1821
- Bibcode:
- 2012JKPS...61.1821K
- Keywords:
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- InAs;
- Ellipsometry;
- Dielectric function;
- Parametric model