Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)
Abstract
Growth of predominantly single crystal (100)-oriented gadolinium oxide (Gd2O3) on a p-type Si(100) and growth of a polycrystal with a predominant Gd2O3(100) crystallite on a n-type Si(100) was performed using molecular beam epitaxy. Despite a poorer crystal structure than Gd2O3(110), an enhancement in carrier mobility can be found only from the Gd2O3(100)/n-type Si(100) interface. The mobility of 1715-1780 cm2/V . s was observed at room temperature, for carrier concentration >1020 cm-3. This accumulation of the electrons and the mobility enhancement may arise from the two-dimensional confinement due to charge transfer across the interface similar to transfer doping.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2012
- DOI:
- 10.1063/1.4768295
- Bibcode:
- 2012ApPhL.101v2903S
- Keywords:
-
- charge exchange;
- electron density;
- electron mobility;
- elemental semiconductors;
- epitaxial layers;
- gadolinium compounds;
- molecular beam epitaxial growth;
- semiconductor-insulator boundaries;
- silicon;
- 73.40.Qv;
- 72.20.Fr;
- 82.30.Fi;
- 81.15.Hi;
- Metal-insulator-semiconductor structures;
- Low-field transport and mobility;
- piezoresistance;
- Ion-molecule ion-ion and charge-transfer reactions;
- Molecular atomic ion and chemical beam epitaxy