Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
Abstract
For AlGaN-based multi-quantum-well light emitters grown on c-plane substrates there is a tendency for the polarization of the emitted light to switch from transverse electric (TE) polarization to transverse magnetic (TM) polarization as the wavelength decreases. This transition depends on various factors that include the strain in the quantum well. Experimental results are presented that illustrate the phenomenon for nitride light emitting diodes (LEDs) grown on sapphire and on bulk AlN. Model calculations are presented which quantify the dependence of the TE/TM switch on the quantum well strain and the Al composition in the barriers surrounding the well.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2012
- DOI:
- 10.1063/1.3675451
- Bibcode:
- 2012ApPhL.100b1101N
- Keywords:
-
- aluminium compounds;
- gallium compounds;
- III-V semiconductors;
- light emitting diodes;
- light polarisation;
- semiconductor quantum wells;
- wide band gap semiconductors;
- 85.60.Jb;
- Light-emitting devices