Optical and electronic properties of Ti1-xNbxN thin films
Abstract
Ti1-xNbxN thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti1-xNbxN film.
- Publication:
-
Solid State Physics
- Pub Date:
- June 2012
- DOI:
- 10.1063/1.4710195
- Bibcode:
- 2012AIPC.1447..699V
- Keywords:
-
- band structure;
- dielectric function;
- infrared spectra;
- niobium compounds;
- reflectivity;
- sputter deposition;
- thin films;
- titanium compounds;
- ultraviolet spectra;
- visible spectra;
- 77.22.Ch;
- 78.20.Ci;
- 78.30.Hv;
- 78.40.Ha;
- 78.66.Nk;
- 81.15.Cd;
- Permittivity;
- Optical constants;
- Other nonmetallic inorganics;
- Other nonmetallic inorganics;
- Insulators;
- Deposition by sputtering