The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers
Abstract
This study employed Ar plasma treatment to selectively damage the p-GaN surface under the p-pad electrode as a current-blocking layer (CBL) on nitride-based light-emitting diodes (LEDs). Increasing the resistivity of the p-GaN region under the p-pad electrode can reduce the current flowing vertically downward from the p-pad electrode. At an injection current of 20 mA, the light output power of LEDs with Ar plasma treatment was 13% larger than that of conventional LEDs. At an injection current of 100 mA, the temperature of the p-pad metal on LEDs with Ar plasma treatment is 13 °C lower than that of the LEDs with a SiO2 CBL. However, the electrostatic discharge endurance of LEDs with Ar plasma treatment is the worst due to the surface damage of p-GaN under the p-pad electrode.
- Publication:
-
Semiconductor Science Technology
- Pub Date:
- August 2011
- DOI:
- 10.1088/0268-1242/26/8/085005
- Bibcode:
- 2011SeScT..26h5005C