A study on fabrication of BaMgF4 thin film toward frequency-conversion device in UV/VUV region
Abstract
BaMgF4 is a novel ferroelectric fluoride which is transparent in the wavelength regions from 125 nm to 1300 nm. Recently, the trial production of the frequency conversion device with BaMgF4 single crystal was reported for the ultraviolet (UV) and vacuum ultraviolet (VUV) wavelength regions, but there has been a few report on it. The BaMgF4 is very attractive ferroelectric crystal because it can be used as a quasi phase matching (QPM) device such as LiNbO3 or LiTaO3. Nonlinear crystals have very large nonlinear coefficients generally, but these coefficients limited wavelength regions to use due to the birefringent phase matching, which limited to the wavelength from 573 nm to 5634 nm. Thus the QPM technique is attractive to fabricate frequency-conversion device in the UV/VUV region. In this study, we have purpose to fabricate BaMgF4 hetero-epitaxial thin films toward frequency conversion devices. The optical-grade BaMgF4 single crystal has been fabricated by Bridgman method. Rather we focus on fabrication of BaMgF4 thin films by the precise and careful method of ion beam sputtering. It will be possible to fabricate also its waveguide structure under the vacuum-consistent process.
- Publication:
-
Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series
- Pub Date:
- March 2011
- DOI:
- 10.1117/12.874424
- Bibcode:
- 2011SPIE.7917E..1QM