Insulating phase of a two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures below ν=(1)/(3)
Abstract
We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state ν = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructures to be a prototype system for highly correlated quantum Hall physics.
- Publication:
-
Physical Review B
- Pub Date:
- July 2011
- DOI:
- 10.1103/PhysRevB.84.033304
- arXiv:
- arXiv:1106.5605
- Bibcode:
- 2011PhRvB..84c3304K
- Keywords:
-
- 73.43.Qt;
- 71.30.+h;
- 73.40.Qv;
- Magnetoresistance;
- Metal-insulator transitions and other electronic transitions;
- Metal-insulator-semiconductor structures;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 17 pages, 3 figures