Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
Abstract
We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in as-grown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM. (
- Publication:
-
Physica Status Solidi C Current Topics
- Pub Date:
- July 2011
- DOI:
- 10.1002/pssc.201001081
- Bibcode:
- 2011PSSCR...8.2424S