Electron-beam pumped pulsed IR semiconductor laser based on a quantum-size InGaAs/AlGaAs structure

The characteristics of the radiation of a 890-nm laser based on a quantum-size InGaAs/AlGaAs structure, pumped by a (15–26)-keV electron beam, have been studied. An output pulsed power up to 90 W with an efficiency of 3.5% is obtained from each laser end face at room temperature of the active element and a cavity length of 0.5 mm.