Growth and properties of the single AgCd 2 GaSe 4 crystals
Abstract
Single crystals of the quaternary phase AgCd 2GaSe 4 were grown using the method of directed crystallization. Their physical properties were studied. Studying the temperature dependence of electrical conductivity an impurity defect band with activation energy of ∼0.30 eV in the upper half of the energy band gap was identified. Based on the analysis of the spectral dependence of the absorption coefficient, the width of the energy gap of the crystals was estimated ∼1.7 eV at T=293 K. At the edge of the intrinsic absorption band this dependence could be approximated by the Urbach rule with the characteristic disorder parameter Δ0∼0.079 eV. Based on this value, concentration of the point defects responsible for the absorption edge blurring was determined to be ∼1.4×10 20 cm -3.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- September 2011
- DOI:
- 10.1016/j.jcrysgro.2011.06.055
- Bibcode:
- 2011JCrGr.330....5B