UV light emission from ZnO nanostructures in SiO2 synthesized by ion implantation and thermal annealing
Abstract
Zinc Oxide (ZnO) nanostructures were synthesized by the implantation of low energy (35 keV) ZnO molecular ions into thermally grown Si O2 at a fluence of 5 × 1016 ions/cm2 . Implanted samples were annealed in an oxygen environment to allow the growth of ZnO precipitates. X-ray photoelectron spectroscopy (XPS), Fourier transform spectroscopy (FTIR) and energy dispersive x-ray spectroscopy (EDS), confirm the formation of ZnO. High resolution transmission electron microscopy (HRTEM) shows the formation of nanostructures having diameters ranging from 2 nm to 5 nm in the Si O2 . Photoluminescence (PL) measurements show excitonic and band-edge emission in the ultraviolet region at temperatures ranging from 4 K - 300 K. Time-resolved PL measurements performed at 4K showed an electron-hole recombination lifetime on the order of a few hundred picoseconds.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2011
- Bibcode:
- 2011APS..MARW11006P