Fabrication and transport properties of a- B5C: H x to n-type Si heterojunction diodes
Abstract
Amorphous hydrogenated boron carbide (a-B5 C:Hx) to n-type Si(100) heterojunction diodes are of interest as next generation 3 He neutron detector replacements. However, high trap concentrations, poor mobility, and interfacial work function mismatch at the a-B5 C:Hx side have yielded unoptimized and/or irreproducible current-voltage and capacitance-voltage values. This talk will present recent results of our effort to rigorously control and validate the properties of all bulk components and their interfaces toward the goal of optimizing the heterojunctions in the context of solid state neutron detection. Of particular interest, we will discuss post growth thermal treatment procedures and conditions that decrease the average leakage current by more than order of magnitude while increasing the hole mobility by a factor of three.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2011
- Bibcode:
- 2011APS..MART32006K