Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs
Abstract
The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.
- Publication:
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arXiv e-prints
- Pub Date:
- November 2010
- DOI:
- 10.48550/arXiv.1011.3307
- arXiv:
- arXiv:1011.3307
- Bibcode:
- 2010arXiv1011.3307B
- Keywords:
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- Condensed Matter - Materials Science