RAPID COMMUNICATION: Epitaxial LaFeAsO1-xFx thin films grown by pulsed laser deposition
Abstract
Superconducting and epitaxially grown LaFeAsO1-xFx thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with the epitaxial relation (001)[100]\parallel
(001)[100] and a full width at half-maximum value of 1°. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc,90% of 25 K with a high residual resistive ratio of 6.8. The preparation technique applied, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post-annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.- Publication:
-
Superconductor Science Technology
- Pub Date:
- February 2010
- DOI:
- 10.1088/0953-2048/23/2/022002
- arXiv:
- arXiv:0909.3788
- Bibcode:
- 2010SuScT..23b2002K
- Keywords:
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- Condensed Matter - Superconductivity
- E-Print:
- 6 pages, 4 Figures