Metallic proximity effect in ballistic graphene with resonant scatterers
Abstract
We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in the vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.
- Publication:
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Semiconductor Science Technology
- Pub Date:
- March 2010
- DOI:
- 10.1088/0268-1242/25/3/034007
- arXiv:
- arXiv:0910.2339
- Bibcode:
- 2010SeScT..25c4007T
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 9 pages, 2 figures