Study of annealing induced redistribution of implanted Au in Si: Fluence dependence
Abstract
One hour 500 °C air annealing induced movement of implanted Au in Si have been studied for 32 keV Au implantation in Si, in the fluence range of 1×1015-1×1017 ions cm. Samples were characterized using Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The results indicate that, depending on the initial state of Au in the matrix, there is a clear difference in the diffusion behaviour of Au in Si. When Au is precipitated as gold-silicide nanoclusters inside the Si matrix, annealing is found to cause diffusion of Au into the bulk Si. Compared to this, for a random atomic distribution of Au in an amorphous Si matrix, annealing is found to result in out-diffusion of Au towards the surface.
- Publication:
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Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- December 2010
- DOI:
- Bibcode:
- 2010NIMPB.268.3471S