Erratum: ``Experimental studies of dose retention and activation in fin field-effect-transistor-based structures'' [J. Vac. Sci. Technol. B 28, C1H5 (2010)]
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- May 2010
- DOI:
- 10.1116/1.3432119
- Bibcode:
- 2010JVSTB..28..648M