Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films
Abstract
B-N codoped ZnO (ZnO:(B,N)) films were grown on quartz substrate by radio-frequency (rf) magnetron sputtering. The influence of post-annealing ambient on electrical and optical properties of ZnO:(B,N) films were investigated using Hall and Photoluminescence (PL) measurement, respectively. Electrical properties studies indicate that both post-annealing ZnO:(B,N) showed p-type conduction. However, compared with ZnO:(B,N) annealed in oxygen, the ZnO:(B,N) annealed in vacuum have low resistivity and high concentration. The PL spectra indicate that two new emission bands located at 3.303 and 3.208 eV originate from the recombination of A 0X and FA related to N acceptor for the annealed p-ZnO:(B,N) in vacuum, but of A 0X, FA related to Zn vacancy for the annealed p-ZnO:(B,N) in oxygen. The mechanism of influence of post-annealing on the electrical and optical properties of the ZnO:(B,N) film is discussed in this work.
- Publication:
-
Journal of Luminescence
- Pub Date:
- January 2010
- DOI:
- 10.1016/j.jlumin.2010.02.003
- Bibcode:
- 2010JLum..130.1101S
- Keywords:
-
- p-type ZnO film;
- B–N codoping;
- Photoluminescence;
- Magnetron sputtering