Tunneling conductance of the graphene SNS junction with a single localized defect
Abstract
Using the Dirac-Bogoliubov-de Gennes equation, we study the electron transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit l def ≪ L ≪ ξ. We find that the spectrum of Andreev bound states is modified in the presence of a single localized defect in the bulk. The minimum tunneling conductance remains the same, and this result is independent of the actual location of the imperfection.
- Publication:
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Soviet Journal of Experimental and Theoretical Physics
- Pub Date:
- April 2010
- DOI:
- 10.1134/S1063776110040084
- arXiv:
- arXiv:1006.1386
- Bibcode:
- 2010JETP..110..613B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 10 pages, 4 figures