Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy
Abstract
The low solubility of Er in GaAs results in the formation of ErAs nanostructures when GaAs is grown with 5-6 at% Er/Ga ratio by molecular beam epitaxy on GaAs surfaces. For growth on the (4 1 1)A GaAs surface, cross-sectional scanning transmission electron microscopy images show the presence of ErAs nanorods embedded in a GaAs matrix extending along the [2 1 1] direction with a spacing of roughly 7 nm and a diameter of roughly 2 nm. Growth on the GaAs (4 1 1)B surface resulted in only nanoparticle formation. Variation of the polarized optical absorption with in-plane polarization angle is consistent with coupling to surface plasmon resonances of the semimetallic nanostructures.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- July 2010
- DOI:
- 10.1016/j.jcrysgro.2010.04.031
- Bibcode:
- 2010JCrGr.312.2089B