Strain Relaxation in SiGe Virtual Substrate Characterized by High Resolution X-Ray Diffraction
Abstract
In this paper, with solid source molecular beam epitaxy technique, Si1-xGex (SiGe) virtual substrates were deposited on low-temperature-grown Si (LT-Si) buffer layer, which was doped with Sb. The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb-doping in LT-Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT-Si layer acts as surfactant and results in abrupt strain relaxation.
- Publication:
-
International Journal of Modern Physics B
- Pub Date:
- 2010
- DOI:
- 10.1142/S0217979210056311
- Bibcode:
- 2010IJMPB..24.4225T
- Keywords:
-
- SiGe virtual substrate;
- Sb-doping;
- Strain modulation;
- high resolution X-ray diffraction;
- 61.10.-i;
- 81.05.Cy;
- 81.15.Hi;
- X-ray diffraction and scattering;
- Elemental semiconductors;
- Molecular atomic ion and chemical beam epitaxy