Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
Abstract
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2010
- DOI:
- arXiv:
- arXiv:1012.1918
- Bibcode:
- 2010ApPhL..97z2104R
- Keywords:
-
- bismuth compounds;
- buffer layers;
- Kerr magneto-optical effect;
- molecular beam epitaxial growth;
- narrow band gap semiconductors;
- optical rotation;
- semiconductor epitaxial layers;
- semiconductor growth;
- spin dynamics;
- time resolved spectra;
- 81.05.Hd;
- 78.20.Ls;
- 78.20.Ek;
- 81.15.Hi;
- 68.55.ag;
- 78.66.Li;
- Other semiconductors;
- Magnetooptical effects;
- Optical activity;
- Molecular atomic ion and chemical beam epitaxy;
- Semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- To appear in Applied Physics Letters