Vacancy clustering and diffusion in heavily P doped Si
Abstract
A kinetic Monte Carlo (KMC) algorithm with a vacancy source and sink has been developed to determine the equilibrium vacancy concentration (CVe) in Si1-xPx alloys. KMC results for CVe exhibit good agreement with the Lomer formula with added entropic terms to account for high P concentrations. They also highlight the role of CVe and clustering on self and impurity diffusion during thermal aging.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2010
- DOI:
- 10.1063/1.3527967
- Bibcode:
- 2010ApPhL..97y1909H
- Keywords:
-
- ageing;
- diffusion;
- doping profiles;
- entropy;
- Monte Carlo methods;
- phosphorus;
- silicon;
- vacancies (crystal);
- 61.72.jd;
- 61.43.Bn;
- 65.40.gd;
- 61.72.U-;
- 66.30.-h;
- 81.40.Cd;
- Vacancies;
- Structural modeling: serial-addition models computer simulation;
- Entropy;
- Doping and impurity implantation;
- Diffusion in solids;
- Solid solution hardening precipitation hardening and dispersion hardening;
- aging