A high-performance top-gate graphene field-effect transistor based frequency doubler
Abstract
A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of the high gate efficiency and low parasitic capacitance of the top-gate device geometry, the gain of the graphene frequency doubler is increased about ten times compared to that of the back-gate G-FET based device. The frequency response of the frequency doubler is also pushed from 10 kHz for a back-gate device to 200 kHz, at which most of the output power is concentrated at the doubled fundamental frequency of 400 kHz.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2010
- DOI:
- Bibcode:
- 2010ApPhL..96q3104W
- Keywords:
-
- capacitance;
- field effect transistors;
- frequency multipliers;
- frequency response;
- graphene;
- 61.48.Gh