Constraints on Models of Electrical Transport in Optimally Doped La2-xSrxCuO4 from Precise Measurements of Radiation-Induced Defect Resistance
Abstract
Recent studies of normal-state magnetotransport in overdoped cuprate superconductors have shed much light on charge carrier transport, showing that both linear T and T^2 scattering rates are distributed around the Fermi surface. Unfortunately, the most discerning magnetotransport probes are not easily applied for the most interesting, optimally-doped cuprates. We have been able to characterize anisotropic scattering in La1.83Sr0.17CuO4 by using a mostly overlooked but powerful resource---measuring the temperature dependence of the defect scattering resistance. When different regions of the Fermi surface contribute to conduction with different temperature dependences, then the gradual degradation of each contribution via added scattering alters the balance in a characteristic way that reveals much about how transport varies around the Fermi surface. Careful new measurements and a new analysis show how both T and T^2 scattering rates coexist as separate parallel conductance channels in La1.83Sr0.17CuO4.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2010
- Bibcode:
- 2010APS..MARZ40008C