Advanced Stress, Strain And Geometrical Analysis In Semiconductor Devices
Abstract
High stresses and defect densities increases the risk of semiconductor device failure. Reliability studies on potential failure sources have an impact on design and are essential to assure the long term functioning of the device. Related to the dramatically smaller volume of semiconductor devices and new bonding techniques on such devices, new methods in testing and qualification are needed. Reliability studies on potential failure sources have an impact on design and are essential to assure the long term functioning of the device. In this paper, the applications of advanced High Resolution X-ray Diffraction (HRXRD) methods in strain, defect and deformation analysis on semiconductor devices are discussed. HRXRD with Rocking Curves (RC's) and Reciprocal Space Maps (RSM's) is used as accurate, non-destructive experimental method to evaluate the crystalline quality, and more precisely for the given samples, the in-situ strain, defects and geometrical parameters such as tilt and bending of device. The combination with advanced FEM simulations gives the possibility to support efficiently semiconductor devices design.
- Publication:
-
Stress-Induced Phenomena in Metallization: 11th International Workshop
- Pub Date:
- November 2010
- DOI:
- 10.1063/1.3527115
- Bibcode:
- 2010AIPC.1300..114N
- Keywords:
-
- semiconductor devices;
- X-ray diffraction;
- annealing;
- monochromators;
- epitaxial growth;
- crystal growth;
- 85.60.Bt;
- 87.64.Bx;
- 81.40.Ef;
- 41.85.Si;
- 81.15.Hi;
- 81.10.Aj;
- Optoelectronic device characterization design and modeling;
- Electron neutron and X-ray diffraction and scattering;
- Cold working work hardening;
- annealing post-deformation annealing quenching tempering recovery and crystallization;
- Beam collimators monochromators;
- Molecular atomic ion and chemical beam epitaxy;
- Theory and models of crystal growth;
- physics of crystal growth crystal morphology and orientation