Current instability with Z- and N-shaped current-voltage characteristics in inhomogeneous In2Se3 crystals

Layered In₂Se₃ crystals with a defect structure grown from a stoichiometric melt using the Bridgman technique are characterized by the electric current instability with Z- and N-shaped features in the current-voltage characteristics, which are typical of superlattices and multiple-quantum-well heterostructures. It is established that the observed behavior is related to the presence of nanodimensional In₆Se₇ inclusions in the α-In₂Se₃ matrix possessing a wider bandgap.