A selective epitaxy collector module for high-speed Si/SiGe:C HBTs
Abstract
This paper presents the results of investigations on high-speed self-aligned Si/SiGe:C HBTs featuring a selective epitaxial growth of the collector. We detail the dc and ac characteristics of the devices and demonstrate the improvement of the control of doping profiles at the base/collector junction. State-of-the-art f T value of 350 GHz has been achieved, the f T BV CEO product being equal to 525 GHz. V.
- Publication:
-
Solid State Electronics
- Pub Date:
- August 2009
- DOI:
- 10.1016/j.sse.2009.04.025
- Bibcode:
- 2009SSEle..53..873G