Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH 3 plasma and annealing treatment
Silicon-rich silicon nitride (SRSN) films were deposited on p-type silicon substrates using a conventional plasma-enhanced chemical vapor deposition (PECVD) system. Before deposition, silicon substrate was pre-treated by NH 3 plasma in the PECVD system. And devices with metal-insulator-semiconductor (MIS) structure were fabricated using indium tin oxides (ITO) as anode and aluminum (Al) film as cathode. It was found that after 1100 °C annealing the electroluminescence (EL) intensity of NH 3 plasma pre-treated MIS devices was increased greatly comparing with that of without NH 3 plasma pre-treated devices. It is due to the passivation or reducing of interfacial states and nonradiative defects in SRSN films by the NH 3 plasma pre-treatment and high-temperature annealing that enhanced the EL intensity of the SRSN MIS devices.