Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH 3 plasma and annealing treatment
Abstract
Silicon-rich silicon nitride (SRSN) films were deposited on p-type silicon substrates using a conventional plasma-enhanced chemical vapor deposition (PECVD) system. Before deposition, silicon substrate was pre-treated by NH 3 plasma in the PECVD system. And devices with metal-insulator-semiconductor (MIS) structure were fabricated using indium tin oxides (ITO) as anode and aluminum (Al) film as cathode. It was found that after 1100 °C annealing the electroluminescence (EL) intensity of NH 3 plasma pre-treated MIS devices was increased greatly comparing with that of without NH 3 plasma pre-treated devices. It is due to the passivation or reducing of interfacial states and nonradiative defects in SRSN films by the NH 3 plasma pre-treatment and high-temperature annealing that enhanced the EL intensity of the SRSN MIS devices.
- Publication:
-
Physica E Low-Dimensional Systems and Nanostructures
- Pub Date:
- May 2009
- DOI:
- 10.1016/j.physe.2008.08.024
- Bibcode:
- 2009PhyE...41..920L
- Keywords:
-
- 78.60.Fi;
- 77.84.Bw;
- 52.77.-j;
- Electroluminescence;
- Elements oxides nitrides borides carbides chalcogenides etc.;
- Plasma applications