Probing the Debye Layer: Capacitance and Potential of Zero Charge Measured Using a Debye-Layer Transistor
Abstract
We present a unique method for probing the properties of the electrolytic Debye layer, incorporating it as the active element in a novel radio frequency (rf) field-effect transistor. The capacitance of the Debye layer depends nonlinearly on the voltage applied across it, and we exploit this dependence to directly modulate the rf conductance between two nanofabricated interdigitated electrodes. We make quantitative measurements of the Debye-layer capacitance, allowing us to determine the potential of zero charge, a quantity of importance for electrochemistry and impedance-based biosensing.
- Publication:
-
Physical Review Letters
- Pub Date:
- April 2009
- DOI:
- 10.1103/PhysRevLett.102.156601
- Bibcode:
- 2009PhRvL.102o6601F
- Keywords:
-
- 85.30.Tv;
- 73.30.+y;
- 82.45.Yz;
- Field effect devices;
- Surface double layers Schottky barriers and work functions;
- Nanostructured materials in electrochemistry