Electronic doping and scattering by transition metals on graphene
Abstract
We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope n type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n type or weakly p type, which provides experimental evidence for a strong interfacial dipole favoring n -type doping as predicted theoretically.
- Publication:
-
Physical Review B
- Pub Date:
- August 2009
- DOI:
- 10.1103/PhysRevB.80.075406
- arXiv:
- arXiv:0903.2837
- Bibcode:
- 2009PhRvB..80g5406P
- Keywords:
-
- 73.63.-b;
- 72.10.Fk;
- 73.23.-b;
- 73.40.Ns;
- Electronic transport in nanoscale materials and structures;
- Scattering by point defects dislocations surfaces and other imperfections;
- Electronic transport in mesoscopic systems;
- Metal-nonmetal contacts;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- v2: revised text, additional data and analysis To appear in Phys. Rev. B