Contact resistance and shot noise in graphene transistors
Abstract
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene field effect transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.
- Publication:
-
Physical Review B
- Pub Date:
- February 2009
- DOI:
- 10.1103/PhysRevB.79.075428
- arXiv:
- arXiv:0810.4568
- Bibcode:
- 2009PhRvB..79g5428C
- Keywords:
-
- 73.23.-b;
- 73.63.-b;
- 73.40.-c;
- Electronic transport in mesoscopic systems;
- Electronic transport in nanoscale materials and structures;
- Electronic transport in interface structures;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 6 pages, 4 figures