Growth and characterization of ZnIn 2Se 4 buffer layer on CuInSe 2 thin films
Abstract
The p-type CuInSe 2 (CIS) films were prepared by electrodeposition following the vacuum annealing process. Zn element was diffused into the CIS film samples at 350 °C by heating Zn grains in vacuum. Then, ZnIn 2Se 4 (ZIS) buffer layer was fabricated on CIS thin film by this thermal diffusion process. The formation of ZIS phase was confirmed by X-ray diffraction pattern (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Dark I- V measurement shows that the Zn-doped CIS (0.89 at%)/Mo structure reveals the rectifying property, which indicates that a p-n junction was formed.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- December 2009
- DOI:
- 10.1016/j.jcrysgro.2009.10.003
- Bibcode:
- 2009JCrGr.312...48S