Depletion of surface accumulation charge in InN by anodic oxidation
Abstract
Si-doped InN layer by molecular beam epitaxy was subjected to anodic oxidation in 0.1 M potassium hydroxide (KOH) electrolyte and characterized by electrochemical methods to derive carrier profile at the InN surface. The obtained results were compared to the characteristics of a planar resistor structure and vertical metal-oxide-semiconductor (MOS) diodes with Ni-metal contacts on the oxidized InN. Both measurements in electrolyte and in air confirmed the formation of a surface oxide layer after the anodic treatment and depletion of the surface accumulation charge of the as-grown InN. The upward band bending of InN at the oxide interface was also concluded from the analysis of capacitance-voltage characteristics of the MOS diodes. Transmission electron microscopy revealed a nonuniform oxide layer containing porelike structures of a few nanometers in diameter.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- February 2009
- DOI:
- 10.1063/1.3073930
- Bibcode:
- 2009JAP...105c3702D
- Keywords:
-
- 81.65.Mq;
- 73.40.Qv;
- 82.45.Rr;
- 82.80.Fk;
- Oxidation;
- Metal-insulator-semiconductor structures;
- Electroanalytical chemistry;
- Electrochemical methods