Current-induced spin polarization in gallium nitride
Abstract
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy and metalorganic chemical vapor deposition with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2∗. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization is observed in the material at temperatures of up to 200 K.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2009
- DOI:
- 10.1063/1.3194781
- arXiv:
- arXiv:0906.0785
- Bibcode:
- 2009ApPhL..95g2110K
- Keywords:
-
- 73.61.Ey;
- 72.25.Dc;
- 78.66.Fd;
- 61.72.uj;
- 42.65.Hw;
- 78.20.Ek;
- III-V semiconductors;
- Spin polarized transport in semiconductors;
- III-V and II-VI semiconductors;
- Phase conjugation;
- photorefractive and Kerr effects;
- Optical activity;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 16 pages, 3 figures